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威世 SI7489DP-T1-GE3 IGBT

訂 貨 號:SI7489DP-T1-GE3      品牌:威世_Vishay

庫存數(shù)量:10             品牌屬性:

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威世 SI7489DP-T1-GE3 IGBT
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Vishay MOSFET

The Vishay surface mount P-channel SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 41mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 28A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

? Halogen free
? Lead (Pb) free component
? Operating temperature ranges between -55°C and 150°C
? TrenchFET power MOSFET

Applications

? Half-bridge motor drives
? High voltage non-synchronous buck converters
? Load switches

Certifications

? ANSI/ESD S20.20:2014
? BS EN 61340-5-1:2007
? IEC 61249-2-21


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